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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1108; BF1108R Silicon RF switches
Product specification Supersedes data of 1999 Aug 19 1999 Nov 18
Philips Semiconductors
Product specification
Silicon RF switches
FEATURES * Specially designed for low loss RF switching up to 1 GHz. APPLICATIONS * Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. PINNING PIN 1 2 3 4 Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA SYMBOL s21(on)2 s21(off)2 RDSon VGSoff PARAMETER losses (on-state) isolation (off-state) drain-source on-resistance pinch-off voltage CONDITIONS RS = RL = 50 ; f 1 GHz VCS = 0; ID = 1 mA ID = 20 A; VDS = 1 V CAUTION DESCRIPTION FET gate; diode anode diode cathode source; note 1 drain; note 1
Marking code: NHp. Marking code: NGp. 1 Top view
BF1108; BF1108R
handbook, 2 columns 4
3
2
MSB014
Fig.1 Simplified outline (SOT143B).
handbook, 2 columns 3
4
2 Top view
1
MSB035
Fig.2 Simplified outline (SOT143R).
MIN. - 30 - -
TYP. - - 12 -3
MAX. 2 - 20 -4
UNIT dB dB V
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Nov 18
2
Philips Semiconductors
Product specification
Silicon RF switches
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL FET VDS VSD VDG VSG ID Diode VR IF Tstg Tj continuous reverse voltage continuous forward current drain-source voltage source-drain voltage drain-gate voltage source-gate voltage drain current PARAMETER
BF1108; BF1108R
MIN. - - - - - - - -65 -
MAX.
UNIT
3 3 7 7 10
V V V V mA
35 100
V mA C C
FET and diode storage temperature junction temperature +150 150
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of FET gate and diode anode lead. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL FET V(BR)GSS VGSoff IDSX IGSS RDSon Diode VF IR forward voltage reverse current IF = 10 mA VR = 25 V - - - - - 1 50 1 V nA A gate-source breakdown voltage gate-source pinch-off voltage drain-source leakage current gate cut-off current drain-source on-state resistance VDS = 0; IGS = 0.1 mA VDS = 1 V; ID = 20 A VGS = -5 V; VDS = 2 V VGS = -5 V; VDS = 0 VGS = 0; ID = 1 mA 7 - - - - - -3 - - 12 - -4 10 100 20 V V A nA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PARAMETER CONDITIONS VALUE 250 UNIT K/W
thermal resistance from junction to soldering point note 1
VR = 20 V; Tamb = 75 C -
1999 Nov 18
3
Philips Semiconductors
Product specification
Silicon RF switches
DYNAMIC CHARACTERISTICS Common cathode; Tamb = 25 C. SYMBOL FET and diode s21(on)2 losses (on-state) VSC = VDC = 0; RS = RL = 50 ; IF = 0; note 1; f 1 GHz VSC = VDC = 0; RS = RL = 50 ; IF = 0; f = 1 GHz VSC = VDC = 0; RS = RL = 75 ; IF = 0; f 1 GHz s21(off)2 isolation (off-state) VSC = VDC = 5 V; RS = RL = 50 ; IF = 1 mA; f 1 GHz VSC = VDC = 5 V; RS = RL = 50 ; IF = 1 mA; f = 1 GHz VSC = VDC = 5 V; RS = RL = 75 ; IF = 1 mA; f 1 GHz RDSon Cic Coc Diode Cd rD Notes 1. IF = diode forward current. diode capacitance diode forward resistance f = 1 MHz; VR = 0 IF = 2 mA; f = 100 MHz; note 3 - - drain-source on-resistance VCS = 0; ID = 1 mA input capacitance; note 2 output capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz VSC = VDC = 0; IF = 0; f = 1 MHz VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz VSC = VDC = 0; IF = 0; f = 1 MHz - - - PARAMETER CONDITIONS
BF1108; BF1108R
MIN.
TYP. - 1.3 - - 38 - 12 1 0.65 1 0.65
MAX.
UNIT
2 - 3 - - - 20 - 0.9 - 0.9 - 0.7
dB dB dB dB dB dB pF pF pF pF
30 - 30 - - - - -
1.1 -
pF
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc. 3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
d
handbook, halfpage
s
s
d
MBL027
g, a
c
c
g, a
SOT143B
SOT143R
Fig.3 Simplified diagram.
1999 Nov 18
4
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
handbook, halfpage |s |2
0
MGS357
handbook, halfpage
0
MGS358
21(on) (dB)
|s21(off)| 2 (dB) -20
-1
-2 -40 -3
-4
-60 0 400 800 f (MHz) 1200
0
400
800
f (MHz)
1200
VSC = VDC = 0 V; RS = RL = 50 ; IF = 0 mA (diode forward current); Measured in test circuit (Fig.6).
VSC = VDC = 5 V; RS = RL = 50 ; IF = 1 mA (diode forward current); Measured in test circuit (Fig.6).
Fig.4
Losses (on-state) as a function of frequency; typical values.
Fig.5
Isolation (off-state) as a function of frequency; typical values.
handbook, full pagewidth
V
1 nF 100 k 47 k 50 output
BF1108/BF1108R 50 input
1 nF
1 nF
4.7 k 100 k V 1 nF
MBL028
On-state: V = 0 V. Off-state: V = 5 V.
Fig.6 Test circuit.
1999 Nov 18
5
Philips Semiconductors
Product specification
Silicon RF switches
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BF1108; BF1108R
SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 Nov 18
6
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y vMA HE
e bp wM B
3
4
Q
A
A1 c
2
b1 e1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143R
REFERENCES IEC JEDEC EIAJ SC-61B
EUROPEAN PROJECTION
ISSUE DATE 97-03-10 99-09-13
1999 Nov 18
7
Philips Semiconductors
Product specification
Silicon RF switches
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BF1108; BF1108R
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Nov 18
8
Philips Semiconductors
Product specification
Silicon RF switches
NOTES
BF1108; BF1108R
1999 Nov 18
9
Philips Semiconductors
Product specification
Silicon RF switches
NOTES
BF1108; BF1108R
1999 Nov 18
10
Philips Semiconductors
Product specification
Silicon RF switches
NOTES
BF1108; BF1108R
1999 Nov 18
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/03/pp12
Date of release: 1999
Nov 18
Document order number:
9397 750 06477

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